After more than half a year of technical research and development by the crystal laboratory research and development team, on August 12th, the first 8-inch N-type SiC crystal was successfully produced. From then on, the research and development of Jingsheng's third-generation semiconductor material SiC entered the 8-inch era, which is another landmark achievement of Jingsheng in the field of wide bandgap semiconductors.

Silicon carbide devices have advantages such as high temperature resistance, high pressure resistance, good high-frequency characteristics, high conversion efficiency, small size, and light weight, and are widely used in fields such as new energy vehicles, rail transit, photovoltaic, and 5G communication. However, the production process of "high hardness, high brittleness and low fracture toughness" silicon carbide has extremely stringent requirements, and the preparation of large size silicon carbide crystals has always been a "BOTTLENECKS" technology in the industry.

The successful development of 8-inch SiC crystals, with a billet thickness of 25mm and a diameter of 214mm, is a significant breakthrough made by Jingsheng in the development

 of large-sized SiC crystals. Not only did it successfully solve the difficult problems of uneven temperature field, crystal cracking, and gas phase raw material distribution during the

 growth process of 8-inch SiC crystals, but it also solved the problem of high substrate proportion in the cost of SiC devices, laying the foundation for the widespread application of 

large-sized SiC substrates.

The independent and controllable growth and processing technology of SiC crystals is the key to seizing the commanding heights of future competition! Throughout, Jingsheng M&E

 has always adhered to the original mission of "building a leading enterprise in semiconductor materials and equipment, and developing a green intelligent high-tech manufacturing

 industry". Through self-developed equipment, thermal field, and process technology, it continuously extends its product series. Starting from 2017, the silicon carbide business was 

laid out, and by 2020, long crystal and processing pilot lines were established. The diameter of SiC crystals has also increased from the initial 4 inches to the current 8 inches, further 

narrowing the technological gap between domestic and foreign countries and ensuring the independent and controllable development of China's silicon carbide industry in key core 

technologies.

Technological innovation, responsible for the country! The successful development of 8-inch SiC conductive single crystal not only greatly enhances the international competitiveness of Jingsheng in the SiC single crystal substrate industry, but also contributes to the localization development of the wide bandgap semiconductor industry and celebrates the 20th National Congress of the Communist Party of China.