Conductive silicon carbide substrate
Third generation semiconductor materials
Master the industry-leading 6-8inch silicon carbide crystal growing technology,and hold independent and controllable large-size silicon carbide crystal growing and processing technology.
Key features
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Silicon carbide has large band gap, high breakdown electric field, high thermal conductivity, high electron saturation rate and strong radiation resistance
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Silicon carbide can be made into power devices such as silicon carbide diodes and silicon carbide MOSFET, mainly used in new energy vehicles, photovoltaic power generation, rail transit, smart grids, aerospace and other fields
Product general parameters
